RB751S-40 Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier diode

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-523 Plastic-Encapsulate Diodes
RB751S-40 Schottky barrier Diode
FEATURES
z Small surface mounting type
z Low reverse current and low forward voltage
z High reliability
SOD-523
MARKING: 5
2
The marking bar indicates the cathode
Solid dot = Green molding compound device,if none,
the normal device.
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃
Parameter
Symbol
Peak reverse voltage
V_RM
DC reverse voltage
V_R
Mean rectifying current
I_O
Non-repetitive Peak Forward Surge
Current@t=8.3ms
I_FSM
Power dissipation
P_D
Thermal Resistance Junction to Ambient RθJA
Junction temperature
T_j
Storage temperature
T_stg
Limit
40
30
30
200
150
667
125
-55~+150
Unit
V
V
mA
mA
mW
℃/W
℃
℃
Electrical Ratings @Ta=25℃
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Symbol _Min
V_F
I_R
C_T
Typ Max Unit
0.37
V
0.5 μA
2
pF
Conditions
I_F=1mA
V_R=30V
V_R=1V,f=1MHZ
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1
D,Mar,2015