RB717F Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier diode

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Diodes
RB717F SCHOTTKY BARRIER DIODE
FEATURES:
Low V_F, Low V_R
High reliability
MARKING: 3E·
SOT-323
1
3
2
Solid dot = Green molding compound device,if none,
the normal device.
Maximum Ratings @Ta=25 ℃
Parameter
Peak reverse voltage
DC reverse voltage
Non-repetitive Peak Forward Surge
Current@t=8.3ms
Average forward current
Power dissipation
Thermal Resistance Junction to Ambient
Junction temperature
Storage temperature
Symbol
V_RM
V_R
I_FSM
I_O
P_D
R_θJA
T_j
T_stg
Limit
40
40
200
30
200
500
125
-55~+150
Unit
V
V
mA
mA
mW
℃/W
℃
℃
ELECTRICAL CHA RACTERISTICS (Ta= 25℃ unless otherwise specified)
Parameter
Reverse voltage leakage current
Symbol
Test conditions
Min
I_R
V_R=10V
Typ
Max
1
Forward voltage
Capacitance between terminals
V_F
I_F=1mA
C_T
V_R=1V, f=1MHz
0.37
2.0
Unit
μA
V
pF
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1
D,Oct,2015