RB715F Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier diode

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Diodes
RB715F SCHOTTKY BARRIER DIODE
FEATURES:
Extra small power mold type
Low VF
High reliability
MARKING: 3D
SOT-323
1
3
2
Solid dot = Green molding compound device,if none,
the normal device.
Maximum Ratings @Ta=25 ℃
Parameter
Symbol
Peak reverse voltage
V_RM
DC reverse voltage
V_R
1RQUHSHWLWLYHPeak )orward 6urge
&urrent#W PV
I_FSM
Average forward current
I_O
Power dissipation
P_D
Thermal Resistance Junction to Ambient 5ș-$
Junction temperature
T_j
Storage temperature
T_stg
Limit
40
40
200
30
200
500
125
-55+~150
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Reverse voltage leakage current
Symbol
I_R
Test conditions
V_R=10V
Min
Typ
Forward voltage
V_F
I_F=1mA
Capacitance between terminals
C_T
V_R=1V, f=1MHz
2.0
Unit
V
V
mA
mA
mW
℃/W
℃
℃
Max
Unit
1
μA
0.37
V
pF
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1
D,Oct,2015