RB706F-40 Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier diode

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Diodes
SOT-323
RB706F-40 Schottky Barrier Diode
FEATURES
z Small package
z Low V_F and low I_R
z High reliability
MAKING: 3J·
1
3
2
Maximum Ratings @Ta=25℃
Parameter
Peak reverse voltage
DC reverse voltage
Mean rectifying current
Non-repetitive Peak Forward
Surge Current@t=8.3ms
Power dissipation
TJuhnercmtioanl RtoesAismtabniecnetfrom
Junction temperature
Storage temperature
Solid dot = Green molding compound device,if none,
the normal device.
Symbol
V_RM
V_R
I_O
I_FSM
P_D
RθJA
T_j
T_stg
Limit
45
40
30
200
200
500
125
-55+150
Unit
V
V
mA
mA
mW
℃/W
℃
℃
Electrical Ratings @Ta=25℃
Parameter
Symbol Min Typ Max Unit
Forward voltage
V_F
Reverse current
I_R
Capacitance between terminals
C_T
0.37 V
1
μA
2
pF
www.cj-elec.com
1
Conditions
I_F=1mA
V_R=10V
V_R=1V, f=1MHZ
D,Oct,2015