RB501V-40 Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier diode

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-323 Plastic-Encapsulate Diodes
SOD-323
RB501V -40 Schottky Barrier Diode
FEATURES
z Low current rectifier schottky diode
z Low voltage, low inductance
z For power supply
MAKINGM: 4
The marking bar indicates the cathode
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃
Parameter
Symbol
Peak reverse voltage
V_RM
DC reverse voltage
V_R
Mean rectifying current
I_O
CNu^orⁿr^-e^rn^et^{p@etti=ti8v.e3mP}s^{eak Forward Surge IFSM}
Power dissipation
P_D
Thermal Resistance Junction to Ambient RθJA
Junction temperature
T_j
Storage temperature
T_stg
Limit
45
40
0.1
1
200
500
125
-55~+150
Unit
V
V
A
A
mW
℃/W
℃
℃
Electrical Ratings @Ta=25℃
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Symbol Min Typ
V_F
I_R
C_T
6
Max Unit
0.55
V
0.34
30 μA
pF
Conditions
I_F=100mA
I_F=10mA
V_R=10V
V_R=10V, f=1MHZ
www.cj-elec.com
1
D,Mar,2015