RB411D Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier diode

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diodes
RB411D SCHOTTKY BARRIER DIODE
SOT-23
FEATURES
z Small Surface Mounting Type
z Low Reverse Current and Low Forward Voltage
z High Reliability
Marking: D3E
Maximum Ratings(Ta=25℃ unless otherwise noted)
Parameter
Peak repetitive reverse voltage
RMS reverse voltage
DC reverse voltage
Mean rectifying output current
Non-repetitive Peak Forward Surge
Current@t=8.3ms
Power Dissipation
Thermal Resistance Junction to
Ambient
Junction temperature
Storage temperature
Symbol
V_RM
V_R(RMS)
V_R
I_O
I_FSM
PD
R_θJA
T_j
T_stg
Limit
40
28
20
500
3
200
500
125
-55~+150
Electrical Ratings @Ta=25℃
Parameter
Reverse breakdown voltage
Forward voltage
Reverse current
Capacitance between terminals
Symbol
V_R
V_F1
V_F2
I_R
C_T
Min.
20
Typ. Max. Unit
V
0.3
V
0.5
V
30
μA
20
pF
Unit
V
V
V
mA
A
mW
℃/W
℃
℃
Condition
I_R=100μA
I_F=10mA
I_F=500mA
V_R=10V
V_R=10V,f=1MHz
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1
F,Oct,2015