PZTA92 Datasheet, PDF (1/4 Pages) NXP Semiconductors – PNP high-voltage transistor

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-223 Plastic-Encapsulate Transistors
PZTA92 TRANSISTOR (PNP)
FEATURES
 High Voltage Driver Applications
MARKING:
SOT-223
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
V_CBO
Collector-Base Voltage
V_CEO
Collector-Emitter Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector Current -Continuous
I_CM
Collector Current- Pulsed
P_C
Collector Power Dissipation
R_θJA
Thermal Resistance from Junction to Ambient
T_J
Junction Temperature
T_stg
Storage Temperature
Value
-300
-300
-5
-0.2
-0.5
1
125
150
-55~150
Unit
V
V
V
A
A
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min Typ Max Unit
Collector-base breakdown voltage
V(BR)CBO IC=-0.1mA,IE=0
-300
V
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0
-300
V
Emitter-base breakdown voltage
V(BR)EBO IE=-0.1mA,IC=0
-5
V
Collector cut-off current
ICBO
VCB=-200V,IE=0
-250 nA
Emitter cut-off current
IEBO
VEB=-3V, IC=0
-100 nA
hFE(1) VCE=-10V, IC=-1mA
25
DC current gain
hFE(2) VCE=-10V, IC=-10mA
40
hFE(3) VCE=-10V, IC=-30mA
25
Collector-emitter saturation voltage
VCE(sat) IC=-20mA,IB=-2mA
-0.5
V
Base-emitter saturation voltage
VBE(sat) IC=-20mA,IB=-2mA
-0.9
V
Transition frequency
fT
VCE=-20V,IC=-10mA, f=100MHz
50
MHz
Collector output capacitance
Cob
VCB=-20V, IE=0, f=1MHz
6
pF
A,Nov,2010
www.cj-elec.com
1
E,Jan,2017