PZTA64 Datasheet, PDF (1/1 Pages) NXP Semiconductors – PNP Darlington transistor

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-223 Plastic-Encapsulate Transistors
PZTA64 TRANSISTOR (PNP)
FEATURES
 Low Voltage and High Current
 High Current Gain Applications
SOT-223
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
-30
VCEO
Collector-Emitter Voltage
-30
VEBO
Emitter-Base Voltage
-10
IC
Collector Current
-500
PC
Collector Power Dissipation
1
RθJA
Thermal Resistance From Junction To Ambient
125
Tj
Junction Temperature
150
Tstg
Storage Temperature
-55~+150
Unit
V
V
V
mA
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
Min Typ
Collector-emitter breakdown voltage V(BR)CES IC=-0.1mA,IB=0
-30
Collector cut-off current
ICBO
VCB=-30V,IE=0
Emitter cut-off current
IEBO
VEB=-10V, IC=0
DC current gain
hFE(1)*
hFE(2)*
VCE=-5V, IC=-10mA
VCE=-5V, IC=-100mA
10000
20000
Collector-emitter saturation voltage VCE(sat)* IC=-100mA,IB=-0.1mA
Base-emitter voltage
VBE* VCE=-5V, IC=-100mA
Transition frequency
fT
VCE=-5V,IC=-10mA, f=100MHz
125
*Pulse test: pulse width ≤350μs, duty cycle≤ 2.0%.
Max
-100
-100
-1.5
-2
Unit
V
nA
nA
V
V
MHz
A,Nov,2010