PZTA56 Datasheet, PDF (1/4 Pages) NXP Semiconductors – PNP general purpose transistor

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-223 Plastic-Encapsulate Transistors
PZTA56 TRANSISTOR (PNP)
FEATURES
 Low Voltage and High Current
 General Purpose Amplifier Applications
MARKING:
SOT-223
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
-80
VCEO
Collector-Emitter Voltage
-80
VEBO
Emitter-Base Voltage
-4
IC
Collector Current
-500
PC
Collector Power Dissipation
1
RθJA
Thermal Resistance From Junction To Ambient
125
Tj
Junction Temperature
150
Tstg
Storage Temperature
-55~+150
Unit
V
V
V
mA
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
Collector-base breakdown voltage
V(BR)CBO IC=-0.1mA,IE=0
Collector-emitter breakdown voltage V(BR)CEO* IC=-1mA,IB=0
Emitter-base breakdown voltage
V(BR)EBO IE=-0.1mA,IC=0
Collector cut-off current
ICBO
VCB=-80V,IE=0
Collector cut-off current
ICEO
VCE=-60V,IB=0
Emitter cut-off current
IEBO
VEB=-3V, IC=0
DC current gain
hFE(1)
hFE(2)
VCE=-1V, IC=-10mA
VCE=-1V, IC=-100mA
Collector-emitter saturation voltage
VCE(sat) IC=-100mA,IB=-10mA
Base-emitter voltage
VBE
VCE=-1V, IC=-100mA
Transition frequency
fT
VCE=-1V,IC=-100mA, f=100MHz
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
Min Typ Max Unit
-80
V
-80
V
-4
V
-100 nA
-100 nA
-100 nA
100
100
-0.25 V
-1.2
V
50
MHz
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1
D,Jan,2017