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| PZTA44 Datasheet, PDF (1/4 Pages) NXP Semiconductors – NPN high-voltage transistor | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-223 Plastic-Encapsulate Transistors
PZTA44 TRA NSISTOR (NPN)
SOT-223
FEATURES
z Low current : 300mA(max)
z High voltage: VCEO=400V
MAXIMUM RATINGS (Ta=25 â unless otherwise noted)
Symbol
Parameter
Value Unit
VCBO
Collector-Base Voltage
400 V
VCEO
Collector-Emitter Voltage
400 V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current -Continuous
200
mA
ICM
Collector Current -Pulsed
300
mA
PC
Collector Power Dissipation
Tj
Junction Temperature
1
W
150
ââ
Tstg
Storage Temperature
-65~150
â
1. BASE
2. COLLECTOR
3. EMITTER
MARKING:
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol Test conditions
Collector-base breakdown voltage
= V(BR)CBO IC=100μA,IE 0
Collector-emitter breakdown voltage = V(BR)CEO IC=1mA,IB 0
Emitter-base breakdown voltage
= V(BR)EBO IE=100μA,IC 0
Collector cut-off current
= ICBO VCB=400V,IE 0
Emitter cut-off current
= IEBO VEB=4V,IC 0
hFE(1) VCE== 10V,IC 1mA
DC current gain
h= FE(2) VCE=10V,IC 10mA
hFE(3) VCE== 10V,IC 50mA
hFE(4) VCE== 10V,IC 100mA
= VCE(sat) IC=1mA,IB 0.1mA
Collector-emitter saturation voltage
= VCE(sat) IC=10mA,IB 1mA
= VCE(sat) IC=50mA,IB 5mA
Base-emitter saturation voltage
VBE(sat) IC=10mA,IB= 1mA
Transition frequency
fT
VC= E=10V,IC= 10mA,f 100MHz
Collector ca pacitance
CC= = VCB=20V,IE 0,f 1MHz
Emitter capacitance
Ce = = VEB=0.5V,IC 0,f 1MHz
Min Typ Max Unit
400
V
400
V
6
V
0.1
μA
0.1
μA
40
50
200
45
40
0.4
V
0.5
V
0.75
V
0.75
V
20
MHz
7
pF
130 pF
www.cj-elec.com
1
G,Jan,2017
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