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| PZTA42 Datasheet, PDF (1/4 Pages) NXP Semiconductors – NPN high-voltage transistor | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-223 Plastic-Encapsulate Transistors
PZTA42 TRANSISTOR (NPN)
FEATURES
· High breakdown voltage
·Low collector-emitter saturation voltage
·Complementary type: PZTA92(PNP)
SOT-223
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol Para
meter
Value
Unit
VCBO
Collector-Base Voltage
300
V
VCEO
Collector-Emitter Voltage
300
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current -Continuous
0.2
A
ICM
Collector Current -Pulsed
0.5
A
PC
Collector Power Dissipation
1
W
Tj
Junction Temperature
Tstg
Storage Temperature
150
â
-55~150
â
MARKING:
Solid dot = Green molding compound device,
if none,the normal device.
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol Test conditions
V(BR)CBO IC=100μA,IE=0
V(BR)CEO IC=1mA,IB=0
V(BR)EBO IE=100μA,IC=0
ICBO
VCB=200V,IE=0
IEBO
VEB=6V,IC=0
hFE(1) VCE=10V,IC=1mA
hFE(2) VCE=10V,IC=10mA
hFE(3) VCE=10V,IC=30mA
VCE(sat) IC=20mA,IB=2mA
VBE(sat) IC=20mA,IB=2mA
fT
VCE=20V,IC=10mA,f=100MHz
Cob VCB=20V,IE=0,f=1MHz
Min Typ Max Unit
300
V
300
V
6
V
0.1
μA
0.1
μA
25
40
40
0.5
V
0.9
V
50
MHz
3
pF
www.cj-elec.com
1
E,Jan,2017
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