PZTA06 Datasheet, PDF (1/4 Pages) NXP Semiconductors – NPN general purpose transistor

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-223 Plastic-Encapsulate Transistors
PZTA06 TRANSISTOR (NPN)
FEATURES
 Low Voltage and High Current
 General Purpose Amplifier Applications
MARKING:
SOT-223
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
80
VCEO
Collector-Emitter Voltage
80
VEBO
Emitter-Base Voltage
4
IC
Collector Current
500
PC
Collector Power Dissipation
1
RθJA
Thermal Resistance From Junction To Ambient
125
Tj
Junction Temperature
150
Tstg
Storage Temperature
-55~+150
Unit
V
V
V
mA
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
Collector-base breakdown voltage
V(BR)CBO IC=0.1mA,IE=0
Collector-emitter breakdown voltage V(BR)CEO* IC=1mA,IB=0
Emitter-base breakdown voltage
V(BR)EBO IE=0.1mA,IC=0
Collector cut-off current
ICBO
VCB=80V,IE=0
Collector cut-off current
ICEO
VCE=60V,IB=0
Emitter cut-off current
IEBO
VEB=3V, IC=0
DC current gain
hFE(1)
hFE(2)
VCE=1V, IC=10mA
VCE=1V, IC=100mA
Collector-emitter saturation voltage
VCE(sat) IC=100mA,IB=10mA
Base-emitter voltage
VBE
VCE=1V, IC=100mA
Transition frequency
fT
VCE=2V,IC=10mA, f=100MHz
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
Min Typ Max Unit
80
V
80
V
4
V
100 nA
100 nA
100 nA
100
100
0.25 V
1.2
V
100
MHz
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