PZT4403 Datasheet, PDF (1/4 Pages) NXP Semiconductors – PNP switching transistor

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-223 Plastic-Encapsulate Transistors
PZT4403 TRANSISTOR (PNP)
FEATURES
 Low Voltage and High Current
 Complementary to PZT4401
 Linear Amplifier and Switch Applications
MARKING:
SOT-223
1. BASE
2. COLLECTOR
3. EMITTER
Solid dot = Green molding compound device,
if none,the normal device.
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
-40
VCEO
Collector-Emitter Voltage
-40
VEBO
Emitter-Base Voltage
-6
IC
Collector Current
-600
PC
Collector Power Dissipation
1
RθJA
Thermal Resistance From Junction To Ambient
125
Tj
Junction Temperature
150
Tstg
Storage Temperature
-55~+150
Unit
V
V
V
mA
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
Min
Collector-base breakdown voltage
V(BR)CBO IC=-0.1mA,IE=0
-40
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0
-40
Emitter-base breakdown voltage
V(BR)EBO IE=-0.1mA,IC=0
-6
Collector cut-off current
ICBO
VCB=-40V,IE=0
Emitter cut-off current
IEBO
VEB=-5V, IC=0
hFE(1) VCE=-1V, IC=-0.1mA
30
DC current gain
hFE(2) VCE=-1V, IC=-1mA
60
hFE(3) VCE=-1V, IC=-10mA
100
hFE(4) VCE=-2V, IC=-150mA
100
hFE(5) VCE=-2V, IC=-500mA
20
Collector-emitter saturation voltage
VCE(sat)
IC=-150mA,IB=-15mA
IC=-500mA,IB=-50mA
Base-emitter saturation voltage
VBE(sat)
IC=-150mA,IB=-15mA
IC=-500mA,IB=-50mA
Transition frequency
fT
VCE=-10V,IC=-20mA, f=100MHz
200
Collector output capacitance
Cob
VCB=-5V, IE=0, f=1MHz
Emitter input capacitance
Cib
VEB=-0.5V, IC=0, f=1MHz
Typ Max Unit
V
V
V
-50
nA
-50
nA
300
-0.4
-0.75
-0.95
-1.3
8.5
35
V
V
V
V
MHz
pF
pF
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1
E,Jan,2017