PZT4401 Datasheet, PDF (1/4 Pages) NXP Semiconductors – NPN switching transistor

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-223 Plastic-Encapsulate Transistors
PZT4401 TRANSISTOR (NPN)
FEATURES
 Low Voltage and High Current
 Complementary to PZT4403
 Linear Amplifier and Switch Applications
MARKING:
SOT-223
1. BASE
2. COLLECTOR
3. EMITTER
Solid dot = Green molding compound device,
if none,the normal device.
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
60
VCEO
Collector-Emitter Voltage
40
VEBO
Emitter-Base Voltage
6
IC
Collector Current
600
PC
Collector Power Dissipation
1
RθJA
Thermal Resistance From Junction To Ambient
125
Tj
Junction Temperature
150
Tstg
Storage Temperature
-55~+150
Unit
V
V
V
mA
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
Min Typ Max Unit
Collector-base breakdown voltage
V(BR)CBO IC=0.1mA,IE=0
60
V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0
40
V
Emitter-base breakdown voltage
V(BR)EBO IE=0.1mA,IC=0
6
V
Collector cut-off current
ICBO
VCB=60V,IE=0
50
nA
Emitter cut-off current
IEBO
VEB=6V, IC=0
50
nA
hFE(1) VCE=1V, IC=0.1mA
20
DC current gain
hFE(2) VCE=1V, IC=1mA
40
hFE(3) VCE=1V, IC=10mA
80
hFE(4) VCE=1V, IC=150mA
100
300
Collector-emitter saturation voltage
VCE(sat)
IC=150mA,IB=15mA
IC=500mA,IB=50mA
0.4
V
0.75
V
Base-emitter saturation voltage
VBE(sat)
IC=150mA,IB=15mA
IC=500mA,IB=50mA
0.95
V
1.2
V
Transition frequency
fT
VCE=10V,IC=20mA, f=100MHz
250
MHz
Collector output capacitance
Cob
VCB=5V, IE=0, f=1MHz
8
pF
Emitter input capacitance
Cib
VEB=0.5V, IC=0, f=1MHz
30
pF
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