PZT3906 Datasheet, PDF (1/4 Pages) NXP Semiconductors – PNP switching transistor

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
SOT-223 Plastic-Encapsulate Transistors
PZT3906 TRANSISTOR (PNP)
SOT-223
FEATURES
 Low Voltage and Low Current
 Complementary to PZT3904
 General Purpose Amplifier and Switch Application
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
^V^C^B^O^C^{ollector-Base Voltage}
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
PC
Collector Power Dissipation
RθJA
Thermal Resistance From Junction To Ambient
Tj
Junction Temperature
Tstg
Storage Temperature
Value
-40
-40
-5
-200
1
125
150
-55~+150
Unit
V
V
V
mA
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
Min Typ Max Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Collector cut-off current
V(BR)CBO*
V(BR)CEO*
V(BR)EBO*
ICBO
ICEO
ICEX
IC=-0.01mA,IE=0
IC=-1mA,IB=0
IE=0.01mA,IC=0
VCB=-30V,IE=0
VCE=-30V, IC=0
VCE=-30V, VBE(off)=-3V
-40
V
-40
V
-5
V
-50 nA
-500 nA
-50
nA
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Emitter input capacitance
Delay time
Rise time
Storage time
Fall time
hFE(1)*
hFE(2)
hFE(3)
hFE(4)
VCE(sat)*
VBE(sat)*
fT
Cob
Cib
td
tr
ts
tf
VCE=-1V, IC=-0.1mA
VCE=-1V, IC=-1mA
VCE=-1V, IC=-10mA
VCE=-1V, IC=-50mA
IC=-10mA,IB=-1mA
IC=-50mA,IB=-5mA
IC=-10mA,IB=-1mA
IC=-50mA,IB=-5mA
VCE=-20V,IC=-10mA, f=100MHz
VCB=-5V, IE=0, f=1MHz
VBE=-0.5V, IC=0, f=1MHz
VCC=-3V, VBE(off)=-0.5V IC=-10mA,
IB1= -IB2=-1mA
VCC=-3V, IC=-10mA,
IB1=-IB2=-1mA
60
80
100
60
-0.65
250
300
-0.25
-0.4
-0.85
-0.95
4.5
10
35
35
225
75
V
V
V
V
MHz
pF
pF
ns
ns
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
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