PZT2907A Datasheet, PDF (1/4 Pages) NXP Semiconductors – PNP switching transistor

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-223 Plastic-Encapsulate Transistors
PZT2907A TRANSISTOR (PNP)
FEATURES
y Epitaxial planar die construction
y Complementary PNP Type available(PZT2222A)
MARKING:
Solid dot = Green molding compound device,
if none,the normal device.
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
SOT-223
1. BASE
2. COLLECTOR
3. EMITTER
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
Unit
-60
V
-60
V
-5
V
-0.6
A
1
W
150
℃
-55~+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector capacitance
Emitter capacitance
Delay time
Rise time
Storage time
Fall time
www.cj-elec.com
Symbol Test conditions
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE(1)
h_FE(2)
h_FE(3)
h_FE(4)
h_FE(5)
V_CE(sat)
V_CE(sat)
V_BE(sat)
V_BE(sat)
f_T
C_c
C_E
t_d
t_r
t_S
t_f
I_C=-10μA,I_E=0
I_C=-10mA,I_B=0
I_E=-10μA,I_C=0
V_CB=-50V,I_E=0
V_EB=-5V,I_C=0
V_CE=-10V,I_C=-0.1mA
V_CE=-10V,I_C=-1mA
V_CE=-10V,I_C=-10mA
V_CE=-10V,I_C=-150mA
V_CE=-10V,I_C=-500mA
I_C=-150mA,I_B=-15mA
I_C=-500mA,I_B=-50mA
I_C=-150mA,I_B=-15mA
I_C=-500mA,I_B=-50mA
V_CE=-20V,I_C=-50mA,f=100MHz
V_CB=-10V,I_E=0,f=1MHz
V_EB=-2V,I_C=0,f=1MHz
I_C=-150mA I_B1=- I_B2=- 15mA
1
Min Typ Max Unit
-60
V
-60
V
-5
V
-10
nA
-50
nA
75
100
100
100
300
50
-0.4
V
-1.6
V
-1.3
V
-2.6
V
200
MHz
8
pF
30
pF
12
ns
30
ns
300
ns
65
ns
D,Jan,2017