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| PZT2222A Datasheet, PDF (1/4 Pages) NXP Semiconductors – NPN switching transistor | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-223 Plastic-Encapsulate Transistors
PZT2222A TRANSISTOR (NPN)
FEATURES
z Epitaxial planar die construction
z Complementary PNP Type available (PZT2907A)
MARKING:
SOT-223
1. BASE
2. COLLECTOR
3. EMITTER
Solid dot = Green molding compound device,
if none,the normal device.
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol Parameter
Value
Unit
VCBO
Collector-Base Voltage
75
V
VCEO
VEBO
IC
PC
TJ
Tstg
Collector-Emitter Voltage
40
V
Emitter-Base Voltage
6
V
Collector Current -Continuous
600
mA
Collector Power Dissipation
1
W
Junction Temperature
150
â
Storage Temperature
-55~ +150
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
V(BR)CBO IC= 10μ A,IE=0
Collector-emitter breakdown voltage
V(BR)CEO IC= 10mA, IB=0
Emitter-base breakdown voltage
V(BR)EBO IE=10μA, IC=0
Collector cut-off current
ICBO
VCB=60V, IE=0
Collector cut-off current
ICEX
VCE=60V,VBE(off)=3V
Emitter cut-off current
IEBO
VEB= 3V , IC=0
hFE(1)
VCE=10V, IC= 0.1mA
hFE(2)
VCE=10V, IC= 1mA
DC current gain
hFE(3)
hFE(4)
VCE=10V, IC= 10mA
VCE=10V, IC= 150mA
hFE(5)
VCE=1V, IC= 150mA
hFE(6)
VCE=10V, IC= 500mA
Collector-emitter saturation voltage
VCE(sat)
VCE(sat)
IC=500mA, IB= 50mA
IC=150mA, IB= 15mA
Base-emitter saturation voltage
VBE(sat)
VBE(sat)
IC=500mA, IB= 50mA
IC=150mA, IB=15mA
Transition frequency
fT
VCE=20V,IC= 20mA, f=100MHz
Output Capacitance
Cob
VCB=10V, IE= 0,f=1MHz
Delay time
Rise time
td
VCC=30V, IC=150mA
tr
VBE(off)=0.5V,IB1=15mA
Storage time
Fall time
tS
VCC=30V, IC=150mA
tf
IB1=-IB2= 15mA
www.cj-elec.com
1
Min
75
40
6
35
50
75
100
50
40
300
Max
10
10
10
300
1
0.3
2.0
1.2
8
10
25
225
60
Unit
V
V
V
nA
nA
nA
V
V
V
V
MHz
pF
ns
ns
ns
ns
D,Jan,2017
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