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| PXT8550 Datasheet, PDF (1/4 Pages) Shenzhen Jin Yu Semiconductor Co., Ltd. – TRANSISTOR(PNP) | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
SOT-89-3L Plastic-Encapsulate Transistors
PXT8550 TRANSISTOR (PNP)
SOT-89-3L
FEATURES
Compliment to PXT8050
1. BASE
2. COLLECTOR
MARKING: Y2
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
3. EMITTER
Symbol
VCBO
VCEO
VEBO
IC
PC
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Value
Unit
-40
V
-25
V
-5
V
-1.5
A
0.5
W
RÎJA
Thermal Resistance From
Junction To Ambient
250
â/W
TJ
Junction Temperature
Tstg
Storage Temperature
150
â
-55~150
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter on voltage
Base-emitter positive favor voltage
Transition frequency
output capacitance
CLASSIFICATION OF hFE(1)
Rank
B
Range
85-160
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
VBE(on)
VBEF
fT
Cob
Test conditions
IC= -100μA, IE=0
IC= -0.1mA, IB=0
IE= -100μA, IC=0
VCB= -40 V,IE=0
VCE= -20V, IB=0
VEB= -5V, IC=0
VCE= -1V, IC= -100mA
VCE= -1V, IC= -800mA
IC=-800mA, IB= -80mA
IC=-800mA, IB= -80mA
Ic=-1V,VCE=-10mA
IB=-1A
VCE= -10V, IC= -50mA
VCB=-10V,IE=0,f=1MHz
C
120-200
D
160-300
Min
-40
-25
-5
85
40
100
Max
-0.1
-0.1
-0.1
400
-0.5
-1.2
-1
-1.55
20
Unit
V
V
V
μA
μA
μA
V
V
V
V
MHz
pF
D3
300-400
www.cj-elec.com
1
D,Aug,2016
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