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| PXT8050 Datasheet, PDF (1/4 Pages) Shenzhen Jin Yu Semiconductor Co., Ltd. – TRANSISTOR(NPN) | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
PXT8050 TRANSISTOR (NPN)
FEATURES
z Compliment to PXT8550
MARKING: Y1
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current -Continuous
PC
Collector Power dissipation
RÎJA
Thermal Resistance From
Junction To Ambient
TJ
Storage Temperature
Tstg
Storage Temperature
Value Unit
40
V
25
V
5
V
1.5
A
0.5
W
250 â/W
150
â
-55~150 â
SOT-89-3L
1. BASE
2. COLLECTOR
3. EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol Test conditions
Collector-base breakdown voltage
V(BR)CBO IC=100uA, IE=0
Collector-emitter breakdown voltage
V(BR)CEO IC=0.1mA, IB=0
Emitter-base breakdown voltage
V(BR)EBO IE=100μA, IC=0
Collector cut-off current
ICBO
VCB=40V, IE=0
Emitter cut-off current
ICEO
VCE=20V, IE=0
Emitter cut-off current
IEBO
VEB=5V, IC=0
DC current gain
hFE(1)
hFE(2)
VCE=1V, IC=100mA
VCE=1V, IC=800mA
Collector-emitter saturation voltage
VCE(sat) IC=800mA, IB=80mA
Base-emitter saturation voltage
VBE(sat) IC=800mA, IB=80mA
Base-emitter voltage
VBE
VCE=1V, IC=10mA
Base-emitter positive favor voltage
VBEF IB=1A
Transition frequency
fT
VCE=10V,IC=50mA,f=30MHz
output capacitance
Cob
VCB=10V,IE=0,f=1MHz
CLASSIFICATION OF hFE(1)
Rank
B
Range
85-160
www.cj-elec.com
C
120-200
1
D
160-300
Min Typ Max Unit
40
V
25
V
5
V
0.1
μA
0.1
μA
0.1
μA
85
400
40
0.5
V
1.2
V
1
V
1.55
V
100
MHz
15
pF
D3
300-400
EA,AJuung,,22001146
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