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| PXT3906 Datasheet, PDF (1/4 Pages) NXP Semiconductors – PNP switching transistor | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
SOT-89-3L Plastic-Encapsulate Transistors
PXT3906
TRANSISTOR (PNP)
SOT-89-3L
FEATURES
z Compliment to PXT3904
1. BASE
z Low current
2. COLLECTOR
z Low voltage
MARKING: 2A
3. EMITTER
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ
Collector-Base Voltage
-40
Collector-Emitter Voltage
-40
Emitter-Base Voltage
-6
Collector Current -Continuous
-0.2
Collector Power Dissipation
0.5
Thermal resistance from junction
to ambient
250
Junction Temperature
150
V
V
V
A
W
â/W
â
Tstg
Storage Temperature
-55-150
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
1
2
3
Parameter
Symbol
Collector-base breakdown voltage
V(BR)CBO
Collector-emitter breakdown voltage V(BR)CEO
Emitter-base breakdown voltage
V(BR)EBO
Collector cut-off current
ICBO
(PLWWHUcut-off current ,EBO
&ROOHFWRUFXWRIIFXUUHQW
ICEX
hFE(1)
hFE(2)
DC current gain
hFE(3)
hFE(4)
hFE(5)
Collector-emitter saturation voltage
VCE(sat)1
VCE(sat)2
Base-emitter saturation voltage
VBE(sat)1
VBE(sat)2
Transition frequency
fT
Collector capacitance
Cc
Emitter capacitance
Ce
Noise figure
NF
Delay time
td
Rise time
tr
Storage time
tS
Fall time
tf
Test conditions
IC=-10μA,IE=0
IC=-1mA,IB=0
IE=-10μA,IC=0
VCB=-30V,IE=0
VEB=-6V,IC=0
VCB=-30V,VBE(off)=-3V
VCE=-1V,IC=-0.1mA
VCE=-1V,IC=-1mA
VCE=-1V,IC=-10mA
VCE=-1V,IC=-50mA
VCE=-1V,IC=-100mA
IC=-10mA,IB=-1mA
IC=-50mA,IB=-5mA
IC=-10mA,IB=-1mA
IC=-50mA,IB=-5mA
VCE=-20V,IC=-10mA,f=100MHz
VCB=-5V,IE=0,f=1MHz
VEB=-0.5V,IC=0,f=1MHz
VCE=-5V,Ic=-0.1mA,f=10Hz-15.7kHz,
RS=1Kâ¦
IC=-10mA , IB1=-IB2= -1mA
www.cj-elec.com
1
Min Typ
-40
-40
-6
60
80
100
60
30
-0.65
250
Max Unit
V
V
V
-0.05 μA
-0.05 μA
-0.05 μA
300
-0.25
-0.4
-0.85
-0.95
4.5
10
V
V
V
V
MHz
pF
pF
4
dB
35
nS
35
nS
225 nS
75
nS
B,Jun,2015
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