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| PXT3904 Datasheet, PDF (1/3 Pages) NXP Semiconductors – NPN switching transistor | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
SOT-89-3L Plastic-Encapsulate Transistors
PXT3904
TRANSISTOR (NPN)
SOT-89-3L
1. BASE
FEATURES
z Compliment to PXT3906
z Low current
z Low voltage
MARKING: 1A
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
Parameter
Value Unit
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
40
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current -Continuous 0.2
A
PC
Collector Power Dissipation
0.5
W
TJ
Junction Temperature
150
â
Tstg
Storage Temperature
-55~150 â
2. COLLECTOR
3. EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
1
2
3
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector ut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector capacitance
Emitter capacitance
Noise figure
Delay time
Rise time
Storage time
Fall time
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
ICEX
hFE(1)
hFE(2)
hFE(3)
hFE(4)
hFE(5)
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
fT
Cc
Ce
Test conditions
IC=10μA,IE=0
IC=1mA,IB=0
IE=10μA,IC=0
VCB=30V,IE=0
VEB=6V,IC=0
VCE=30V,VBE(off)=3V
VCE=1V,IC=0.1mA
VCE=1V,IC=1mA
VCE=1V,IC=10mA
VCE=1V,IC=50mA
VCE=1V,IC=100mA
IC=10mA,IB=1mA
IC=50mA,IB=5mA
IC=10mA,IB=1mA
IC=50mA,IB=5mA
VCE=20V,IC=10mA,f=100MHz
VCB=5V,IE=0,f=1MHz
VEB=0.5V,IC=0,f=1MHz
NF
VCE=5V,Ic=0.1mA,f=10Hz-15.7kHz,
RS=1Kâ¦
td
tr
tS
IC=10mA , IB1=-IB2= 1mA
tf
Min Typ Max Unit
60
V
40
V
6
V
0.05 μA
0.05 μA
0.05 μA
60
80
100
300
60
30
0.2
V
0.3
V
0.65
0.85
V
0.95
V
300
MHz
4
pF
8
pF
5
dB
35
ns
35
ns
200
ns
50
ns
www.cj-elec.com
1
CD,Nov,2015
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