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| PXT2907A Datasheet, PDF (1/4 Pages) NXP Semiconductors – PNP switching transistor | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
PXT2907A TRANSISTOR (PNP)
SOT-89-3L
FEATURES
z Switching and Linear Amplification
z High Current and Low Voltage
z Complement to PXT2222A
MARKING:p2F
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
1. BASE
2. COLLECTOR
3. EMITTER
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-60
-60
-5
-600
500
250
150
-55~+150
Unit
V
V
V
mA
mW
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
V(BR)CBO IC=-1mA,IE=0
Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0
Emitter-base breakdown voltage
V(BR)EBO IE=-1mA,IC=0
Collector cut-off current
ICBO
VCB=-50V,IE=0
Emitter cut-off current
IEBO
VEB=-5V,IC=0
VCE=-10V, IC=-0.1mA
VCE=-10V, IC=-1mA
DC current gain
hFE
VCE=-10V, IC=-10mA
VCE=-10V, IC=-150mA
VCE=-10V, IC=-500mA
Collector-emitter saturation voltage
VCE(sat)
IC=-500mA,IB=-50mA
IC=-150mA,IB=-15mA
Base-emitter saturation voltage
VBE(sat)
IC=-500mA,IB=-50mA
IC=-150mA,IB=-15mA
Delay time
Rise time
Storage time
td
VCC=-30V, IC=-150mA,
tr
IB1=- IB2=-15mA
ts
Fall time
tf
Transition frequency
fT
VCE=-10V,IC=-20mA, f=100MHz
Min Typ
-60
-60
-5
75
100
100
100
50
200
Max
-0.01
-0.01
300
-1.6
-0.4
-2.6
-1.3
12
30
300
65
Unit
V
V
V
µA
µA
V
V
V
V
ns
ns
ns
ns
MHz
www.cj-elec.com
1
D,Nov,2015
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