PCR06A Datasheet, PDF (1/3 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – Silicon Planar pnpn Thyristor

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
TO-92 Plastic-Encapsulate Transistors
PCR 0.6 A Silicon Planar pnpn Thyristor
FEATURES
Current-I_GT :120 A
I_TRMS : 0.6A
V_DRM : 400V
Operating and storage junction temperature range
T_J T_stg : -55 to +150
TO 92
1.CATHODE
2.GATE
3.ANODE
123
ELECTRICAL CHARACTERISTICS Tamb=25
Parameter
Symbol
unless otherwise specified
Test conditions
MIN
MAX
On state voltage
VTM
ITM=0.6A
1.7
Gate trigger voltage
VGTF
VAK=7V
0.8
Repetitive peak off-state voltage
VDRM
IDRM= 10 A
400
Holding current
IH
IHL= 20 mA , Av = 7 V
5
A2
5
15
A1
15
30
Gate trigger current
A-1
IGTF
A-2
VAR=7V
30
45
45
60
A
60
80
B
80
120
UNIT
V
V
V
mA
µA
µA
µA
µA
µA
µA