MPS751 Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – Silicon PNP Transistor

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
MPS751 TRANSISTOR (PNP)
FEATURES
Switching and Amplifier Applications
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
V_CBO
V_CEO
V_EBO
I_C
P_C
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
R_θJA
Thermal Resistance from Junction
to Ambient
T_J
Junction Temperature
T_stg
Storage Temperature
Value
-80
-60
-5
-2
0.625
200
150
-55-150
Unit
V
V
V
A
W
℃/W
℃
℃
TO-92
1. EMITTER
2. BASE ₁
23
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base -emitter saturation voltage
Base -emitter on voltage
Transition frequency
*
Pulse Test: Pulse Width<= 300us, Duty Cycle = 2.0%.
V_(BR)CBO
V_(BR)CEO*
I_C=-100μA,I_E=0
I_C=-10mA,I_B=0
V_(BR)EBO I_E=-10μA,I_C=0
I_CBO
V_CB=-80V,I_E=0
I_EBO
h_FE(1) ^*
h_FE(2) ^*
h_FE(3) ^*
h_FE(4) ^*
V_EB=-4V,I_C=0
V_CE=-2V,I_C=-50mA
V_CE=-2V,I_C=-500mA
V_CE=-2V,I_C=-1A
V_CE=-2V,I_C=-2A
V_CE(sat) ^*
V_BE(sat) ^*
V_BE(on) ^*
I_C=-2A,I_B=-200mA
I_C=-1A,I_B=-100mA
I_C=-1A,I_B=-100mA
V_CE=-2V,I_C=-1A
f_T
V_CE=-5V,I_C=-50mA,f=100MHz
Min Typ Max Unit
-80
V
-60
V
-5
V
-0.1 μA
-0.1 μA
75
75
75
40
-0.5
V
-0.3
-1.2
V
-1
V
75
MHz
www.cj-elec.com
1
E,Jun,2016