MPS3702 Datasheet, PDF (1/3 Pages) Samsung semiconductor – PNP (AMPLIFIER TRANSISTOR)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
MPS3702 TRANSISTOR (PNP)
FEATURES
z General Purpose Amplifier Transistor
TO – 92
1.EMITTER
2.BASE
3.COLLECTOR
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-40
-25
-5
-0.8
625
200
150
-55~+150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Collector-base breakdown voltage
V_(BR)CBO I_C= -0.1mA,I_E=0
-40
Collector-emitter breakdown voltage
V_(BR)CEO I_C=-10mA,I_B=0
-25
Emitter-base breakdown voltage
V_(BR)EBO I_E=-0.1mA,I_C=0
-5
Collector cut-off current
I_CBO
V_CB=-20V,I_E=0
Emitter cut-off current
I_EBO
V_EB=-3V,I_C=0
DC current gain
h_FE*
V_CE=-5V, I_C=-50mA
60
Collector-emitter saturation voltage
V_CE(sat) ^* I_C=-50mA,I_B=-5mA
Base-emitter voltage
V_BE*
I_C=-50mA, V_CE=-5V
-0.6
Current gain-bandwidth product
f_T
V_CE=-5V,I_C=-50mA,f=20MHz
100
Collector output capacitance
C_ob
V_CB=-10V,I_E=0, f=1MHz
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
Typ Max Unit
V
V
V
-0.1
μA
-0.1
μA
300
-0.25
V
-1.0
V
MHz
12
pF
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1
C,Dec,2015