MPS2222 Datasheet, PDF (1/3 Pages) Motorola, Inc – General Purpose Transistors

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
MPS2222 TRANSISTOR (NPN)
FEATURES
z General Purpose Switching and Amplification
TO – 92
1.EMITTER
2.BASE
3.COLLECTOR
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_J
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
60
30
5
0.6
625
200
150
-55~+150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min Typ Max Unit
Collector-base breakdown voltage
V_(BR)CBO I_C= 0.01mA,I_E=0
60
V
Collector-emitter breakdown voltage
V_(BR)CEO I_C=10mA,I_B=0
30
V
Emitter-base breakdown voltage
V_(BR)EBO I_E=0.01mA,I_C=0
5
V
Collector cut-off current
I_CBO
V_CB=50V,I_E=0
0.01
μA
Collector cut-off current
ICEX
VCE=60V,VEB(off)=3V
0.01
μA
Emitter cut-off current
I_EBO
h_FE(1) ^*
V_EB=3V,I_C=0
V_CE=10V, I_C=150mA
0.1
μA
100
300
DC current gain
h_FE(2)
V_CE=10V, I_C=0.1mA
35
h_FE(3)
V_CE=10V, I_C=500mA
30
Collector-emitter saturation voltage
V_CE(sat) ^*
I_C=500mA,I_B=50mA
1
V
Base-emitter saturation voltage
V_BE
*
(sat)
I_C=500mA,I_B=50mA
2
V
Collector output capacitance
C_ob
V_CB=10V,I_E=0, f=100MHz
8
pF
Transition frequency
f_T
VCE=20V,IC= 20mA, f=100MHz 250
MHz
Delay time
t_d
VCC=30V, VBE(off)=-0.5V
10
nS
Rise time
t_r
IC=150mA , IB1= 15mA
25
nS
Storage time
t_s
VCC=30V, IC=150mA
225
nS
Fall time
t_f
IB1=IB2=15mA
60
nS
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
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1
C,Dec,2015