MMSTA92 Datasheet, PDF (1/4 Pages) Diodes Incorporated – PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
SOT-323 Plastic-Encapsulate Transistors
MMSTA92 TRANSISTOR (PNP)
FEATURES
 Small Surface Mount Package
 Complementary to MMSTA42
 Ideal for Medium Power Amplification and Switching
MARKING:K3R
SOT–323
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
-310
VCEO Collector-Emitter Voltage
-305
VEBO Emitter-Base Voltage
-5
IC
Collector Current-Continuous
-200
ICM
Collector Current -Pulsed
-500
PC
Collector Power Dissipation
200
RΘJA Thermal Resistance From Junction To Ambient
625
Tj
Junction Temperature
Tstg
Storage Temperature
150
-55～+150
Unit
V
V
V
mA
mA
mW
℃/W
℃
℃
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
V(BR)CBO IC=-100µA, IE=0
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0
Emitter-base breakdown voltage
V(BR)EBO IE=-100µA, IC=0
Collector cut-off current
ICBO
VCB=-200V, IE=0
Collector cut-off current
VCE=-200V, IB=0
ICEO
VCE=-300V, IB=0
Emitter cut-off current
IEBO
VEB=-5V, IC=0
VCE=-10V, IC=-1mA
DC current gain
hFE
VCE=-10V, IC=-10mA
VCE=-10V, IC=-30mA
Collector-emitter saturation voltage
VCE(sat) IC=-20mA, IB=-2mA
Base-emitter saturation voltage
VBE(sat) IC=-20mA, IB=-2mA
Transition frequency
fT
VCE=-20V,IE=-10mA , f=30MHz
Collector output capacitance
Cob
VCB=-20V, IE=0, f=1MHz
Min
Typ
Max Unit
-310
V
-305
V
-5
V
-250
nA
-250
nA
-5
µA
-100
nA
60
100
200
60
-0.2
V
-0.9
V
50
MHz
6
pF

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