MMSTA42 Datasheet, PDF (1/4 Pages) Diodes Incorporated – NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Transistors
MMSTA42 TRANSISTOR (NPN)
FEATURES
z High Breakdown Voltage
z Low Collector-Emitter Saturation Voltage
z Complementary to MMSTA92(PNP)
MARKING:K3M
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
V_CBO
Collector-Base Voltage
300
V
V_CEO
Collector-Emitter Voltage
300
V
V_EBO
Emitter-Base Voltage
5
V
I_C
Collector Current -Continuous
0.2
A
I_CM
Collector Current -Pulsed
0.5
A
P_C
Collector Power Dissipation
0.3
W
R_θJA
Thermal Resistance from Junction
to Ambient
417
℃/W
T_j
Junction Temperature
150
℃
T_stg
Storage Temperature
-55-150
℃
SOT-323
1. BASE
2. EMITTER
 3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency

ww w.cj-elec.com
Symbol Test conditions
V_(BR)CBO I_C=100μA,I_E=0
V_(BR)CEO I_C=1mA,I_B=0
V_(BR)EBO I_E=100μA,I_C=0
I_CBO
V_CB=200V,I_E=0
I_EBO
V_EB=5V,I_C=0
h_FE(1) V_CE=10V,I_C=1mA
h_FE(2) V_CE=10V,I_C=10mA
h_FE(3) V_CE=10V,I_C=30mA
V_CE(sat) I_C=20mA,I_B=2mA
V_BE(sat) I_C=20mA,I_B=2mA
f_T
V_CE=20V,I_C=10mA,f=30MHz
1
Min Typ Max Unit
300
V
300
V
5
V
0.25 μA
0.1
μA
60
100
200
75
0.2
V
0.9
V
50
MHz
CA,JSuenp,,22001144