MMST3906 Datasheet, PDF (1/4 Pages) Transys Electronics – PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
SOT-323 Plastic-Encapsulate Transistors
MMST3906 TRANSISTOR (PNP)
FEATURES
 Complementary to MMST3904
MARKING:K5N
SOT–323
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
-40
VCEO Collector-Emitter Voltage
-40
VEBO Emitter-Base Voltage
-5
IC
Collector Current
-200
PC
Collector Power Dissipation
200
RΘJA Thermal Resistance From Junction To Ambient
625
Tj
Junction Temperature
Tstg
Storage Temperature
150
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
V(BR)CBO* IC=-10µA, IE=0
Collector-emitter breakdown voltage V(BR)CEO* IC=-1mA, IB=0
Emitter-base breakdown voltage
V(BR)EBO* IE=-10µA, IC=0
Base cut-off current
IBL*
VCE=-30V, VEB(Off)=-3V
Collector cut-off current
ICEX*
VCE=-30V, VEB(Off)=-3V
VCE=-1V, IC=-100µA
DC current gain
hFE*
VCE=-1V, IC=-1mA
VCE=-1V, IC=-10mA
Collector-emitter saturation voltage
VCE(sat)*
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
Base-emitter saturation voltage
VBE(sat)*
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
Transition frequency
fT
VCE=-20V,IC=-10mA , f=100MHz
Collector output capacitance
Cob
VCB=-5V, IE=0, f=1MHz
Collector output capacitance
Cib
VEB=-0.5V, IE=0, f=1MHz
Delay time
td
VCC=-3V, VBE(off)=-0.5V, IC=-10mA,
Rise time
tr
IB1=-1mA
Storage time
Fall time
ts
VCC=3V, IC=-10mA, IB1= IB2=-1mA
tf
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
Min
Typ
Max Unit
-40
V
-40
V
-5
V
-50
nA
-50
nA
60
80
100
300
-0.2
V
-0.3
V
-0.65
-0.85
V
-0.95
V
250
MHz
4.5
pF
10
pF
35
ns
35
ns
225
ns
75
ns
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CA,JAuung,,22001146