MMST2907A Datasheet, PDF (1/4 Pages) Diodes Incorporated – PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
SOT-323 Plastic-Encapsulate Transistors
MMST2907A TRANSISTOR (PNP)
SOT-323
FEATURES
y Epitaxial planar die construction
y Complementary PNP Type available(MMST2222A)
MARKING:K3F
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS(Ta=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction Temperature
Storage Temperature
Value
Unit
-60
V
-60
V
-5
V
-0.6
A
0.2
W
150
℃
-55 to +150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output capacitance
Input capacitance
Delay time
Rise time
Storage time
Fall time
Symbol Test conditions
V_(BR)CBO I_C=-10μA,I_E=0
V_(BR)CEO I_C=-10mA,I_B=0
V_(BR)EBO I_E=-10μA,I_C=0
I_CBO
V_CB=-50V,I_E=0
I_CES
V_CB=-30V,I_B=0
I_EBO
V_EB=-3V,I_C=0
h_FE(1) V_CE=-10V,I_C=-0.1mA
h_FE(2) V_CE=-10V,I_C=-1mA
h_FE(3) V_CE=-10V,I_C=-10mA
h_FE(4) V_CE=-10V,I_C=-150mA
h_FE(5) V_CE=-10V,I_C=-500mA
V_CE(sat) I_C=-150mA,I_B=-15mA
V_CE(sat) I_C=-500mA,I_B=-50mA
V_BE(sat) I_C=-150mA,I_B=-15mA
V_BE(sat) I_C=-500mA,I_B=-50mA
f_T
V_CE=-20V,I_C=-50mA,f=100MHz
C_ob
V_CB=-10V,I_E=0,f=0.1MHz
Cib
V_EB=-2V,I_C=0,f=0.1MHz
t_d
V_CC=-30V,V_BE(off)=-1.5V,I_C=-150mA
t_r
I_B1==- 15mA
t_S
V_CC=-30V,I_C=-150mA,I_B1=-I_B2=-15mA
t_f
Min Typ
-60
-60
-5
75
100
100
100
50
-0.6
200
Max Unit
V
V
V
-100 n A
-100 nA
-100 nA
300
-0.4
V
-1.6
V
-1.3
V
-2.6
V
MHz
8
pF
30
pF
10
ns
40
ns
80
ns
30
ns
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