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| MMDT9014 Datasheet, PDF (1/4 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – DUAL TRANSISTOR | |||
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JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-363 Plastic-Encapsulate Transistors
MMDT9014 DUAL TRANSISTOR (NPN+NPN)
FEATURES
z Epitaxial Planar Die Construction
z Complementary PNP Type Available(MMDT9015)
z Ideal for Medium Power Amplification and Switching
SOT-363
MARKING:TGL6
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector- Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
50
45
5
0.1
0.2
150
-55~+150
Unit
V
V
V
A
W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol Test conditions
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
V(BR)CBO
V(BR)CEO
IC=100μA, IE=0
IC=100μA, IB=0
Emitter-base breakdown voltage
Collector cut-off current
V(BR)EBO
ICBO
IE=100μA, IC=0
VCB=50V, IE=0
Collector cut-off current
Emitter cut-off current
ICEO
VCE=35V, IB=0
IEBO
VEB=4V, IC=0
DC current gain
Collector-emitter saturation voltage
hFE
VCE(sat)
VCE=5V, IC=1mA
IC=100mA, IB=5mA
Base-emitter saturation voltage
Base-emitter voltage
VBE(sat)
VBE
IC=100mA, IB=5mA
VCE=5V,IC=2mA
Transition frequency
Collector output capacitance
fT
VCE=5V,IC=10mA, f=30MHz
Cob
VCB=10V, IE=0, f=1MHz
Noise Figure
NF
VCE=5V, IC=0.2mA,
Rg=2kâ¦,f=1kHz
Min Typ Max Unit
Min
Typ
Max Unit
50
V
45
V
5
V
0.1
μA
1
μA
0.1
μA
300
400
0.3
V
1
V
0.58
0.7
V
150
MHz
3.5
pF
10
dB
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