English
Language : 

MMDT5551 Datasheet, PDF (1/4 Pages) Diodes Incorporated – DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
JCET
-,$1*68 &+$1*-,$1* (/(&7521,&6 7(&+12/2*< &2 /7'
627 3ODVWLF(QFDSVXODWH 7UDQVLVWRUV
00'7 DUAL TRANSISTOR (NPN+NPN)
)($785(6
z Epitaxial Planar Die Construction
z Complementary PNP Type Available(MMDT5401)
z Ideal for Medium Power Amplification and Switching
05.,1*.1
0$;,080 5$7,1*6 7D Я XQOHVV RWKHUZLVH QRWHG
6\PERO
9&%2
9&(2
9(%2
,&
3&
7-
7VWJ
3DUDPHWHU
Collector- Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
9DOXH
180
160
6
0.2
0.2
150
-55-150
8QLWV
V
V
V
A
W
Я
Я
627
6
5
4
1
2
3
(/(&75,&$/ &+$5$&7(5,67,&6 7D Я XQOHVV RWKHUZLVH VSHFLILHG
3DUDPHWHU
&ROOHFWRUEDVH EUHDNGRZQ YROWDJH
&ROOHFWRUHPLWWHU EUHDNGRZQ YROWDJH
(PLWWHUEDVH EUHDNGRZQ YROWDJH
&ROOHFWRU FXWRII FXUUHQW
(PLWWHU FXWRII FXUUHQW
'& FXUUHQW JDLQ
&ROOHFWRUHPLWWHU VDWXUDWLRQ YROWDJH
%DVHHPLWWHU VDWXUDWLRQ YROWDJH
7UDQVLWLRQ IUHTXHQF\
2XWSXW &DSDFLWDQFH
1RLVH )LJXUH
6\PERO 7HVW FRQGLWLRQV
V(BR)CBO IC=100ȝA,IE=0
V(BR)CEO IC=1mA , IB=0
V(BR)EBO IE=10ȝA, IC=0
ICBO
VCB=120V, IE=0
IEBO
VEB=4V, IC=0
hFE(1) VCE=5 V, IC=1mA
hFE(2) VCE=5 V, IC=10mA
hFE(3) VCE=5 V, IC=50mA
VCE(sat)1 IC=10mA, IB=1mA
VCE(sat)2 IC=50mA, IB=5mA
VBE(sat)1 IC=10mA, IB=1mA
VBE(sat)2 IC=50mA, IB=5mA
fT
VCE=10V, IC=10mA,f=100MHz
Cob
VCB=10V, IE=0, f=1MHz
NF
VCE=5V, IC=0.2mA,
RS=1Kȍ,f =1kHz
0LQ
180
160
6
80
100
30
100
7\S 0D[ 8QLW
V
V
V
0.05 ȝA
0.05 ȝA
300
0.15
0.2
1
1
300
6
V
V
V
V
MHz
pF
8
dB
www.cj-elec.com
1
F,Mar,2016