MMDT5451 Datasheet, PDF (1/4 Pages) Diodes Incorporated – COMPLEMENTARY NPN/PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

JCET
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-363 Plastic-Encapsulate Transistors
MMDT5451 DUAL TRANSISTOR (NPN+PNP)
FEATURES
z Epitaxial Planar Die Construction
z Ideal for low Power Amplification and Switching
z One 5551(NPN), one 5401(PNP)
MRKING:KNM
MAXIMUM RATINGS NPN 5551 (Ta=25Я unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R©_JA
T_J
T_stg
Parameter
Collector- Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Value
180
160
6
0.2
0.2
625
150
-55-150
Units
V
V
V
A
W
Я/W
Я
Я
627
6
5
4
1
2
3
ELECTRICAL CHARACTERISTICS NPN 5551 (Ta=25Я unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Output Capacitance
Current Gain-Bandwidth Product
Noise Figure
Symbol Test conditions
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE1
h_FE2
h_FE3
V_CE(sat)
V_BE(sat)
C_obo
f_T
NF
I_C=100ȝA,I_E=0
I_C=1mA,I_B=0
I_E=10ȝA,I_C=0
V_CB=120V,I_E=0
V_EB=4V,I_C=0
V_CE=5V,I_C=1mA
V_CE=5V,I_C=10mA
V_CE=5V,I_C=50mA
I_C=10mA, I_B=1mA
I_C=50mA, I_B=5mA
I_C=10mA, I_B=1mA
I_C=50mA, I_B=5mA
V_CB = 10V, f = 1.0MHz, I_E = 0
V_CE = 10V, I_C = 10mA, f = 100MHz
V_CE= 5.0V, I_C = 200μA,
R_S = 1.0k¡f = 1.0kHz
Min Typ
Max Unit
180
V
160
V
6
V
0.05 ȝA
0.05 ȝA
80
100
300
30
0.15
V
0.2
V
1
V
1
V
6.0
pF
100
300 MHz
8.0
dB
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1
D,Mar,2016