 English |
|
|
|
|
|
|
|
| MMDT5401 Datasheet, PDF (1/4 Pages) Diodes Incorporated – DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR | |||
| |||
|
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-363 Plastic-Encapsulate Transistors
MMDT5401 DUAL TRANSISTOR (PNP+PNP)
FEATURES
z Epitaxial Planar Die Construction
z Complementary NPN Type Available(MMDT 5551)
z Ideal for Medium Power Amplification and Switching
SOT-363
MRKING:K4M
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector- Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-160
-150
-5
-0.2
0.2
150
-55-150
Units
V
V
V
A
W
â
â
ELECTRICAL CHARACTERISTICS (Ta= 25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output Capacitance
Noise Figure
Symbol Test conditions
V(BR)CBO IC=-100μA , IE=0
V(BR)CEO IC= -1mA , IB=0
V(BR)EBO IE=-10μA, IC=0
ICBO
VCB=-120 V , IE=0
IEBO
VEB=-3V , IC=0
hFE(1) VCE=-5 V, IC= -1mA
hFE(2) VCE=-5 V, IC= -10mA
hFE(3) VCE=-5 V, IC= -50mA
VCE(sat)1 IC=-10 mA, IB=-1mA
VCE(sat)2 IC=-50 mA, IB=-5mA
VBE(sat)1 IC= -10 mA, IB=-1mA
VBE(sat)2 IC= -50 mA, IB=-5mA
fT
VCE= -10V, IC= -10mA,f = 100MHz
Cob
VCB=-10V, IE= 0,f=1MHz
NF
VCE= -5.0V, IC= -200μA,
RS= 10â¦,f = 1.0kHz
Min Typ
-160
-150
-5
50
100
50
100
Max Unit
V
V
V
-0.05 μA
-0.05 μA
300
-0.2
V
-0.5
V
-1
V
-1
V
MHz
6
pF
8.0
dB
www.cj-elec.com
1
D,Mar,2016
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese