MMDT4413 Datasheet, PDF (1/4 Pages) Transys Electronics – COMPLEMENTARY NPN/PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
SOT-363 Plastic-Encapsulate Transistors
MMDT4413 ^{DUAL TRANSISTOR (NPN+PNP)}
FEATURES
z Complementary Pair
z One 4401-Type NPN
One 4403-Type PNP
z Epitaxial Planar Die Construction
z Ideal for Low Power Amplification and Switching
MAKING: K13
SOT-363
Maximum Ratings, NPN 4401 Section (Ta = 25℃ unless otherwise specified)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_J
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Value
60
40
6
0.6
0.2
625
150
-55 to +150
Units
V
V
V
A
W
℃/W
℃
℃
NPN 4401 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output Capacitance
Delay time
Rise time
Storage time
Fall time
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Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_CEO
I_EBO
h_FE(1)
h_FE(2)
h_FE(3)
h_FE(4)
h_FE(5)
V_CE(sat)1
V_CE(sat)2
V_BE(sat)1
V_BE(sat)2
f_T
C_ob
t_d
t_r
t_S
t_f
Test conditions
I_C= 100 μA, I_E=0
I_C= 1mA, I_B=0
I_E= 100 μA, I_C=0
V_CB= 50 V , I_E=0
V_CE= 35 V , I_B=0
V_EB= 5V , I_C=0
V_CE= 1V, I_C= 0.1mA
V_CE= 1V, I_C= 1mA
V_CE= 1V, I_C= 10mA
V_CE= 1V, I_C= 150mA
V_CE= 2V, I_C= 500mA
I_C=150 mA, I_B= 15mA
I_C=500 mA, I_B= 50mA
I_C= 150 mA, I_B= 15mA
I_C= 500 mA, I_B= 50mA
V_CE= 10V,I_C= 20mA,f=100MHz
V_CB=5V, I_E= 0,f=1MHz
V_CC=30V,
V_BE=2.0V,I_C=150mA ,I_B1=15mA
V_CC=30V, I_C=150mA,I_B1=- I_B2= 15mA
1
M in
60
40
6
20
40
80
100
40
0.75
250
Max
Unit
V
V
V
0.1
μA
0.5
μA
0.1
μA
300
0.4
V
0.75
V
0.95
V
1.2
V
MHz
6.5
pF
15
nS
20
nS
225
nS
30
nS
D,Mar,2016