MMDT4403 Datasheet, PDF (1/4 Pages) Transys Electronics – DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
SOT-363 Plastic-Encapsulate Transistors
MMDT4403 ^{DUAL TRANSISTOR (PNP+PNP)}
FEATURES
z Epitaxial Planar Die Construction
z Ideal for Low Power Amplification and Switching
SOT-363
MRKING:K2T
Maximum Ratings (Ta=25℃ unless otherwise specified)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_J
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Value
-40
-40
-5
-0.6
0.2
625
150
-55 to +150
Units
V
V
V
A
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output capacitance
Delay time
Rise time
Storage time
Fall time
Symbol Test conditions
V_(BR)CBO I_C=-100μA , I_E=0
V_(BR)CEO I_C= -1mA , I_B=0
V_(BR)EBO I_E=-100μA, I_C=0
I_CBO
V_CB=-50V, I_E=0
I_CEO
V_CE=-35V, I_B=0
I_EBO
V_EB=-5V, I_C=0
h_FE(1) V_CE=-1V, I_C= -0.1mA
h_FE(2) V_CE=-1V, I_C= -1mA
h_FE(3) V_CE=-1 V, I_C= -10mA
h_FE(4) V_CE=-2 V, I_C= -150mA
h_FE(5) V_CE=-2 V, I_C= -500mA
V_CE(sat)1 I_C=-150 mA, I_B=-15mA
V_CE(sat)2 I_C=-500 mA, I_B=-50mA
V_BE(sat)1 I_C= -150 mA, I_B=-15mA
V_BE(sat)2 I_C= -500 mA, I_B=-50mA
f_T
V_CE= -10V, I_C=-20mA,f = 100MHz
C_ob
V_CB=-10V, I_E=0,f=1MHz
t_d
V_CC=-30V, V_BE=-2V,I_C=-150mA ,
t_r
I_B1=-15mA
t_S
V_CC=-30V, I_C=-150mA
t_f
B1^{=- I}B2^{= -15mA}
Min
-40
-40
-5
30
60
100
100
20
-0.75
200
Typ Max Unit
V
V
V
-0.1 μA
-0.5 μA
-0.1 μA
300
-0.4
-0.75
-0.95
-1.3
8.5
15
20
225
30
V
V
V
V
MHz
pF
nS
nS
nS
nS
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1
F,Mar,2016