MMDT3906 Datasheet, PDF (1/4 Pages) Transys Electronics – DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T ^{SOT-363 Plastic-Encapsulate Transistors}
MMDT3906 DUAL TRANSISTOR (PNP+PNP)
SOT-363
FEATURES
·^{Epitaxial planar die construction}
·Ideal for low power amplification and switching
MARKING:K3N
MAXIMUM RATINGS(T_a=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_J
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance. Junction to Ambient Air
Junction Temperature
Storage Temperature
Value
-40
-40
-5
-0.2
0.2
625
150
-55-150
ELECTRICAL CHARACTERISTICS(Ta=25℃unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Base cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Delay time
Rise time
Storage time
Fall time
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CEX
I_EBO
h_FE(1)
h_FE(2)
h_FE(3)
h_FE(4)
h_FE(5)
V_CE(sat)1
V_CE(sat)2
V_BE(sat)1
V_BE(sat)2
f_T
C_ob
NF
t_d
t_r
t_S
t_f
Test conditions
I_C=-10μA,I_E=0
I_C=-1mA,I_B=0
I_E=-10μA,I_C=0
V_CE=-30V,V_EB(OFF)=-3V
V_EB=-5V,I_C=0
V_CE=-1V,I_C=-0.1mA
V_CE=-1V,I_C=-1mA
V_CE=-1V,I_C=-10mA
V_CE=-1V,I_C=-50mA
V_CE=-1V,I_C=-100mA
I_C=-10mA,I_B=-1mA
I_C=-50mA,I_B=-5mA
I_C=-10mA,I_B=-1mA
I_C=-50mA,I_B=-5mA
V_CE=-20V,I_C=-10mA,f=100MHz
V_CB=-5V,I_E=0,f=1MHz
V_CE=-5V,I_c=-0.1mA,f=1KHz,R_g=1KΩ
V_CC=-3V, V_BE=0.5V
I_C=-10mA , I_B1=-I_B2=-1mA
V_CC=-3V, I_C=-10mA
I_B1=-I_B2=- 1mA
Min
-40
-40
-5
60
80
100
60
30
-0.65
250
Units
V
V
V
A
W
℃/W
℃
℃
Typ Max Unit
V
V
V
-50 nA
-50 nA
300
-0.25
-0.4
-0.85
-0.95
4.5
4
35
35
225
75
V
V
V
V
MHz
pF
dB
nS
nS
nS
nS
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