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| MMDT2227 Datasheet, PDF (1/4 Pages) Transys Electronics – COMPLEMENTARY NPN/PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR | |||
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JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-363 Plastic-Encapsulate Transistors
MMDT2227 DUAL TRANSISTOR (NPN+PNP)
FEATURE
z Epitaxial planar die construction
z One 2222A NPN
One 2907A PNP
z Ideal for power amplification and switching
SOT-363
MARKING: K27
NPN 2222A
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
Parameter
Value Units
VCBO Collector-Base Voltage
75
V
VCEO Collector-Emitter Voltage
40
V
VEBO Emitter-Base Voltage
6
V
IC
Collector Current -Continuous
600
mA
PC
Collector Power Dissipation
200
mW
TJ
Junction Temperature
150
â
Tstg Storage Temperature
-55-150
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Collector-base breakdown voltage
V(BR)CBO
IC= 10μA, IE=0
75
Collector-emitter breakdown voltage V(BR)CEO
IC= 10mA, IB=0
40
Emitter-base breakdown voltage
V(BR)EBO
IE=10μA.IC=0
6
Collector cut-off current
ICBO
VCB= 60V, IE=0
Collector cut-off current
ICEX
VCE= 60V,VEB(off)=3V
Emitter cut-off current
IEBO
VEB= 3 V, IC=0
hFE(1) *
VCE=10V, IC= 0.1mA
35
hFE(2) *
VCE=10V, IC= 1mA
50
DC current gain
hFE(3) *
VCE=10V, IC= 10mA
75
hFE(4) *
VCE=10V, IC= 150mA
100
hFE(5) *
VCE=10V, IC= 500mA
40
hFE(6) *
VCE=1V, IC= 150mA
35
Collector-emitter saturation voltage
VCE(sat)1*
VCE(sat)2*
IC=150mA, IB= 15mA
IC=500mA, IB= 50mA
VBE(sat)1*
IC=150mA, IB=15mA
0.6
Base-emitter saturation voltage
VBE(sat)2*
IC=500mA, IB= 50mA
Transition frequency
VCE=20V, IC= 20mA,
fT
300
f=100MHz
Output Capacitance
Input Capacitance
Noise Figure
Cob
VCB=10V, IE=0,f=1MHz
Cib
VEB=0.5V,IC= 0,f=1MHz
VCE=10V, IC=100μA,
NF
f=1KHz,Rs=1Kâ¦
pulse test
www.cj-elec.com
1
Max
10
10
10
300
0.3
1
1.2
2
8
25
4
Unit
V
V
V
nA
nA
nA
V
V
V
V
MHz
pF
pF
dB
D,Mar,2016
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