MMBTH10 Datasheet, PDF (1/4 Pages) Diodes Incorporated – NPN SURFACE MOUNT VHF/UHF TRANSISTOR

JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
MMBTH10 TRANSISTOR (NPN)
SOT–23
FEATURES
 VHF/UHF Transistor
MARKING: 3EM
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RΘJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
30
25
3
50
225
556
150
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VBE
fT
Cob
Test conditions
IC=100µA, IE=0
IC=1mA, IB=0
IE=10µA, IC=0
VCB=25V, IE=0
VEB=2V, IC=0
VCE=10V, IC=4mA
IC=4mA, IB=0.4mA
VCE=10V, IC=4mA
VCE=10V,IC=4mA
f=100MHz
VCB=10V, IE=0, f=1MHz
1. BASE
2. EMITTER
3. COLLECTOR
Min
Typ
Max
30
25
3
0.1
0.1
60
0.5
0.95
650
0.7
Unit
V
V
V
µA
µA
V
V
MHz
pF
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CA,JOucnt,2014