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| MMBTA92E Datasheet, PDF (1/3 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-03A Plastic-Encapsulate Transistors
MMBTA92E TRANSISTOR
DESCRIPTION
PNP Epitaxial Silicon Transistor
FEATURES
Power dissipation PCM : 0.15 W (Tamb=25â)
APPLICATION
High Voltage Amplifier
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
MARKING:2D
C
C
WBFBP-03A
(1.6Ã1.6Ã0.5)
unit: mm
TOP
BE
1. BASE
C
2. EMITTER
3. COLLECTOR BACK
EB
2D
BE
MAXIMUM RATINGS TA=25â unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current -Continuous
TJ
Junction Temperature
Tstg
Storage Temperature
RÓ¨JA
Thermal Resistance, junction to Ambient
RÓ¨JC
Thermal Resistance, unction to Case
Value
-310
-305
-5
-300
150
-55-150
200
83.3
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
I CEO
IEBO
hFE(1)
hFE(2)
hFE(3)
VCE(sat)
VBE(sat)
fT
Test conditions
IC= -100µA, IE=0
IC= -1mA, IB=0
IE= -100µA, IC=0
VCB=-200V, IE=0
VCE=-200V, IB=0
VCE=-300V, IB=0
VEB= -5V, IC=0
VCE= -10V, IC= -1mA
VCE= -10V, IC=-10mA
VCE= -10V, IC=-30mA
IC=-20 mA, IB= -2mA
IC= -20 mA, IB= -2mA
VCE=-20V, IC= -10mA
f=30MHz
MIN
-310
-305
-5
60
100
60
50
Units
V
V
V
mA
â
â
â/W
â/W
MAX
-0.25
-0.25
-5
-0.1
200
-0.2
-0.9
UNIT
V
V
V
µA
µA
µA
µA
V
V
MHz
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