MMBTA92 Datasheet, PDF (1/4 Pages) NXP Semiconductors – PNP high-voltage transistor

JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
MMBTA92 TRANSISTOR (PNP)
FEATURES
High voltage transistor
MARKING:2D
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CM
P_C
T_j
T_stg
R_Ó¨JA
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Current -Pulsed
Collector Power Dissipation
Junction Temperature
Storage Temperature
Thermal Resistance From Junction To Ambient
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
Value
-300
-300
-5
-200
-500
300
150
-55-150
417
Unit
V
V
V
mA
mA
mW
℃
℃
℃/W
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE(1)
h_FE(2)
h_FE(3)
V_CE(sat)
V_BE(sat)
f_T
Test conditions
I_C= -100μA, I_E=0
I_C= -1mA, I_B=0
I_E= -100μA, I_C=0
V_CB=-200V, I_E=0
V_EB= -5V, I_C=0
V_CE= -10V, I_C= -1mA
V_CE= -10V, I_C=-10mA
V_CE= -10V, I_C=-30mA
I_C=-20mA, I_B= -2mA
I_C= -20mA, I_B= -2mA
V_CE=-20V, I_C= -10mA
f=30MHz
Min
-300
-300
-5
60
100
60
50
Max
-0.25
-0.1
200
-0.2
-0.9
Unit
V
V
V
μA
μA
V
V
MHz
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DA,JOucnt,2014