MMBTA56 Datasheet, PDF (1/4 Pages) Samsung semiconductor – PNP (DRIVER TRANSISTOR)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
SOT-23 Plastic-Encapsulate Transistors
MMBTA56 TRANSISTOR (PNP)
SOT–23
FEATURES
 General Purpose Amplifier Applications
MARKING: 2GM
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
-80
VCEO Collector-Emitter Voltage
-80
VEBO Emitter-Base Voltage
-4
IC
Collector Current
-500
PC
Collector Power Dissipation
225
RΘJA Thermal Resistance From Junction To Ambient
555
Tj
Junction Temperature
150
Tstg
Storage Temperature
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Collector-base breakdown voltage
V(BR)CBO IC=-100µA, IE=0
-80
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0
-80
Emitter-base breakdown voltage
V(BR)EBO IE=-100µA, IC=0
-4
Collector cut-off current
ICBO
VCB=-80V, IE=0
Collector cut-off current
ICEO
VCE=-60V, IB=0
Emitter-base breakdown voltage
IEBO
VEB=-4V, IC=0
DC current gain
hFE(1) VCE=-1V, IC=-10mA
100
hFE(2) VCE=-1V, IC=-100mA
100
Collector-emitter saturation voltage
VCE(sat) IC=-100mA, IB=-10mA
Base-emitter voltage
VBE
VCE=-1V, IC=-100mA
Transition frequency
fT
VCE=-1V,IC=-100mA, f=100MHz
50
Typ
Max
Unit
V
V
V
-0.1
µA
-1
µA
-0.1
µA
400
-0.25
-1.2
V
V
MHz
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AC,Junl,2,2001155