MMBTA44 Datasheet, PDF (1/4 Pages) List of Unclassifed Manufacturers – SOT-23-3L Plastic-Encapsulate Transistors

JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
MMBTA44 TRANSISTOR (NPN)
SOT–23
FEATURES
 High Collector-Emitter Voltage
 Complement to MMBTA94
MARKING: 3D
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO Collector-Base Voltage
400
V
VCEO Collector-Emitter Voltage
400
V
VEBO Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
200
mA
IC0
Collector Current -Pulsed
300
mA
PC
Collector Power Dissipation
350
mW
RΘJA Thermal Resistance From Junction To Ambient
357
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55～+150 ℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
V(BR)CBO
IC=100µA, IE=0
Collector-emitter breakdown voltage
V(BR)CEO*
IC=1mA, IB=0
Emitter-base breakdown voltage
V(BR)EBO
IE=10µA, IC=0
Collector cut-off current
ICBO
VCB=400V, IE=0
Emitter cut-off current
IEBO
VEB=4V, IC=0
hFE(1) *
VCE=10V, IC=1mA
DC current gain
hFE(2) *
hFE(3) *
VCE=10V, IC=10mA
VCE=10V, IC=50mA
hFE(4) *
VCE=10V, IC=100mA
VCE(sat)1*
IC=1mA, IB=0.1mA
Collector-emitter saturation voltage
VCE(sat)2*
IC=10mA, IB=1mA
VCE(sat)3*
IC=50mA, IB=5mA
Base-emitter saturation voltage
VBE(sat)*
IC=10mA, IB=1mA
Collector output capacitance
Cob
VCB=20V, IE=0, f=1MHz
Emitter input capacitance
Cib
VEB=0.5V, IC=0, f=1MHz
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
1. BASE
2. EMITTER
3. COLLECTOR
Min
Typ
Max
400
400
6
0.1
0.1
40
50
200
45
40
0.4
0.5
0.75
0.75
7
130
Unit
V
V
V
µA
µA
V
V
V
V
pF
pF
www.cj-elec.com
1
DA,JOucnt,2014