MMBTA43 Datasheet, PDF (1/3 Pages) Zowie Technology Corporation – HIGH VOLTAGE TRANSISTOR NPN SILICON

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
SOT-23 Plastic-Encapsulate Transistors
MMBTA43 TRANSISTOR (NPN)
SOT–23
FEATURES
 High Voltage Application
 Telephone Application
 Complementary to MMBTA93
MARKING:ABX
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
200
VCEO Collector-Emitter Voltage
200
VEBO Emitter-Base Voltage
5
IC
Collector Current
500
PC
Collector Power Dissipation
350
RΘJA Thermal Resistance From Junction To Ambient
357
Tj
Junction Temperature
Tstg
Storage Temperature
150
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max Unit
Collector-base breakdown voltage
V(BR)CBO IC=0.1mA, IE=0
200
V
Collector-emitter breakdown voltage
V(BR)CEO IC=1mA, IB=0
200
V
Emitter-base breakdown voltage
V(BR)EBO IE=0.1mA, IC=0
5
V
hFE(1)* VCE=10V, IC=10mA
40
DC current gain
hFE(2)* VCE=10V, IC=1mA
40
hFE(3)* VCE=10V, IC=30mA
40
Collector-emitter saturation voltage
VCE(sat)* IC=20mA, IB=2mA
0.5
V
Base-emitter saturation voltage
VBE(sat)* IC=20mA, IB=2mA
0.9
V
Transition frequency
fT
VCE=20V,IE=10mA, f=100MHz
50
MHz
Collector output capacitance
Cob
VCB=20V, IE=0, f=1MHz
4
pF
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
www.cj-elec.com
1
BA,OJucnt,2014