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| MMBTA42E Datasheet, PDF (1/4 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-03A Plastic-Encapsulate Transistors
MMBTA42E TRANSISTOR
DESCRIPTION
NPN Epitaxial Silicon Transistor
FEATURES
Power dissipation PCM : 0.15 W (Tamb=25â)
APPLICATION
High Voltage Amplifier
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
MARKING:1D
C
C
WBFBP-03A
(1.6Ã1.6Ã0.5)
unit: mm
TOP
BE
1. BASE
C
2. EMITTER
3. COLLECTOR BACK
EB
1D
BE
MAXIMUM RATINGS TA=25â unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current -Continuous
TJ
Junction Temperature
Tstg
Storage Temperature
RÓ¨JA
Thermal Resistance, junction to Ambient
RÓ¨JC
Thermal Resistance, unction to Case
Value
310
305
5
300
150
-55-150
200
83.3
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
I CEO
IEBO
hFE(1)
hFE(2)
hFE(3)
VCE(sat)
VBE(sat)
fT
Test conditions
IC= 100µA, IE=0
IC= 1mA, IB=0
IE= 100µA, IC=0
VCB=200V, IE=0
VCE=200V, IB=0
VCE=300V, IB=0
VEB= 5V, IC=0
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=30mA
IC=20mA, IB= 2mA
IC= 20mA, IB=2mA
VCE=20V, IC= 10mA
f=30MHz
MIN
310
305
5
60
100
75
50
Units
V
V
V
mA
â
â
â/W
â/W
MAX
0.25
0.25
5
0.1
UNIT
V
V
V
µA
µA
µA
µA
200
0.2
V
0.9
V
MHz
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