MMBTA42 Datasheet, PDF (1/4 Pages) NXP Semiconductors – NPN high-voltage transistor

JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate Transistors
MMBTA42 TRANSISTOR (NPN)
FEATURES
z High breakdown voltage
z Low collector-emitter saturation voltage
z Complementary to MMBTA92 (PNP)
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
Marking: 1D
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
V_CBO
Collector-Base Voltage
300
V
V_CEO
Collector-Emitter Voltage
300
V
V_EBO
Emitter-Base Voltage
5
V
I_C
Collector Current -Continuous
0.3
A
I_CM
Collector Current-Peak
0.5
A
P_C
Collector Power dissipation
0.35
W
R_Ó¨JA
Thermal Resistance, junction to Ambient
357
℃/W
T_J
Junction Temperature
T_stg
Storage Temperature
150
℃
-55~+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE(1)
h_FE(2)
h_FE(3)
V_CE(sat)
V_BE(sat)
f_T
I_C= 100μA,I_E=0
I_C= 1mA, I_B=0
I_E= 100μA, I_C=0
V_CB=200V, I_E=0
V_EB= 5V, I_C=0
V_CE= 10V, I_C= 1mA
V_CE= 10V, I_C=10mA
V_CE=10V, I_C=30mA
I_C=20mA, I_B= 2mA
I_C= 20mA, I_B=2mA
V_CE= 20V, I_C= 10mA,
f=30MHz
Min
300
300
5
60
100
60
Max
0.25
0.1
200
0.2
0.9
Unit
V
V
V
μA
μA
V
V
50
MHz
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CA,JOucnt,2014