 English |
|
|
|
|
|
|
|
| MMBTA13_14 Datasheet, PDF (1/4 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR (NPN) | |||
| |||
|
JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
MMBTA13 TRANSISTOR (NPN)
FEATURES
Darlington Amplifier
Marking : K2D
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
Unit : mm
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
30
VCEO
Collector-Emitter Voltage
30
VEBO
Emitter-Base Voltage
10
IC
Collector Current -Continuous
0.3
PC
Collector Power Dissipation
300
RθJA
Thermal Resistance from Junction to Ambient
417
TJ
Junction Temperature
150
Tstg
Storage Temperature
-55~+150
Unit
V
V
V
A
mW
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO*
IEBO*
hFE(1) *
hFE(2) *
VCE (sat)*
VBE (sat) *
VBE *
Transition frequency
fT
Collector output capacitance
Cob
* Pulse Test : pulse widthâ¤300μs,duty cycleâ¤2%.
Test conditions
IC= 100μA,IE=0
IC= 100μA, IB=0
IE= 100μA, IC=0
VCB=30 V, IE=0
VEB= 10V ,IC=0
VCE=5V, IC= 10mA
VCE=5V, IC= 100mA
IC=100mA, IB=0.1mA
IC=100mA, IB=0.1mA
VCE=5V,IC= 100mA
VCE=5V, IC= 10mA
f=100MHz
VCB=10V,IE=0,f=1MHz
Min
30
30
10
5000
10000
Max
0.1
0.1
1.5
2
2.0
125
12
Unit
V
V
V
μA
μA
V
V
V
MHz
pF
www.cj-elec.com
1
CA,JOucnt,2014
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese