MMBTA13 Datasheet, PDF (1/4 Pages) Transys Electronics – NPN SURFACE MOUNT DARLINGTON TRANSISTOR

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
MMBTA13 14 TRANSISTOR NPN
FEATURES
SOT 23
1. BASE
2. EMITTER
3. COLLECTOR
Power dissipation
P_CM : 0.3W Tamb=25
Collector current
I_CM: 0.3A
Collector-base voltage
V_(BR)CBO : 30V
Operating and storage junction temperature range
T_J T_stg: -55 to +150
Unit : mm
ELECTRICAL CHARACTERISTICS Tamb=25
Parameter
Symbol
unless otherwise specified
Test conditions
MIN MAX
Collector-base breakdown voltage
V(BR)CBO
Ic= 100 A IE=0
30
Collector-emitter breakdown voltage
V(BR)CEO
Ic= 100uA IB=0
30
Collector-emitter breakdown voltage
V(BR)EBO
IE= 100 A Ic=0
10
Collector cut-off current
ICBO
VCB=30 V , IE=0
0.1
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
IEBO
VEB= 10V , IC=0
0.1
hFE(1) *
VCE=5V, IC= 10m A
VCE=5 V, IC= 100mA
hFE(2) *
MMBTA13 5000
MMBTA14 10000
MMBTA13 10000
MMBTA14 20000
VCE (sat) * IC=100 mA, IB=0.1m A
1.5
Base-emitter voltage
VBE *
VCE=5V,IC= 100mA
2.0
Transition frequency
fT
VCE=5V, IC= 10mA
125
f=100MHz
UNIT
V
V
V
A
A
V
V
MHz
* Pulse Test : pulse width
Marking : MMBTA13:1M MMBTA14 1N