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| MMBTA05 Datasheet, PDF (1/4 Pages) Transys Electronics – NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR | |||
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JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
MMBTA05 TRANSISTOR (NPN)
SOT-23
FEATURES
Driver transistor
MARKING :1H
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
60
VCEO Collector-Emitter Voltage
60
VEBO Emitter-Base Voltage
4
IC
Collector Current
500
PC
Collector Power Dissipation
300
RÎJA Thermal Resistance From Junction To Ambient
417
Tj
Junction Temperature
Tstg
Storage Temperature
150
-55ï½+150
Unit
V
V
V
mA
mW
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Collector cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Symbol
Test conditions
Min
V(BR)CBO IC= 100μA, IE=0
60
V(BR)CEO IC= 1mA, IB=0
60
V(BR)EBO IE=100μA, IC=0
4
ICBO
VCB=60V, IE=0
ICEO
VCE=60V, IB=0
IEBO
VEB=3V, IC=0
hFE1
VCE=1V, IC= 10mA
100
hFE2
VCE=1V, IC= 100mA
100
VCE(sat)
IC=100mA, IB=10mA
VBE
VCE=1V, IC= 100mA
VCE= 2V, IC=10mA
fT
100
f=100MHz
Typ Max
Unit
V
V
V
0.1
μA
0.1
μA
0.1
μA
400
0.25
V
1.2
V
MHz
www.cj-elec.com
1
CA,JOucnt,2014
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