MMBT589 Datasheet, PDF (1/4 Pages) Galaxy Semi-Conductor Holdings Limited – PNP General Purpose Transistor

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T ^{SOT-23 Plastic-Encapsulate Transistors}
MMBT589 TRANSISTOR (PNP)
SOT-23
FEATURES
z High current surface mount PNP silicon switching transistor for
Load management in portable applications
MARKING :589
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_J
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance, junction to Ambient
Junction Temperature
Storage Temperature
Value
-50
-30
-5
-1
310
403
150
-55-150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector-emitter cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter Turn-on voltage
Transition frequency
Collector Output Capacitance
Symbol
Test conditions
V_(BR)CBO I_C=-100μA,I_E=0
V_(BR)CEO I_C=-10mA,I_B=0
V_(BR)EBO I_E=-100μA,I_C=0
I_CBO
V_CB=-30V,I_E=0
I_CES
V_CES=-30V
I_EBO
V_EB=-4V,I_C=0
h_FE1 V_CE=-2V,I_C=-1mA
h_FE2 V_CE=-2V,I_C=-500mA
h_FE3 V_CE=-2V,I_C=-1A
h_FE4 V_CE=-2V,I_C=-2A
V_CE(sat)1 I_C= -500mA, I_B=-50mA
V_CE(sat)2 I_C= -1A, I_B=-100mA
V_CE(sat)3 I_C= -2A, I_B=-200mA
V_BE(sat) I_C= -1A, I_B=-100mA
V_BE(on)
f_T
V_CE=-2V, I_C=-1A
V_CE=-5V, I_C=-100mA ,
f =100MHz
Cob
f=1MHz
www.cj-elec.com
1
1. BASE
2. EMITTER
3. COLLECTOR
Min Typ Max Unit
-50
V
-30
V
-5
V
-0.1 μA
-0.1 μA
-0.1 μA
100
100
300
80
40
-0.25 V
-0.3
V
-0.65 V
-1.2
V
-1.1
V
100
MHz
15
pF
CA,Jun,20145